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| TCZT8020 Vishay Telefunken Matchable Pairs - Emitter and Detector Description Pairs of infrared-emitting diode and phototransistor, matched in their optical and electrical features. These pairs enable a lot of applications. They can be used both for transmissive or reflective sensor functions. The peak wavelength of the emitter is l = 950 nm. Applications D Generally used for industrial processing and controlling, end of tape detector Features D Subminiature case with lens D Detector with optical filter, protected against ambient light 96 12317 D Detector case black for easy identification of the emitter and detector D Emitter-angle of half intensity = 25 D Detector-angle of half sensitivity = 25 D Emitter and detector in sideview case Order Instruction Ordering Code TCZT8020-PAER Remarks Document Number 83774 Rev. A3, 20-Jul-99 www.vishay.com 1 (7) TCZT8020 Vishay Telefunken Absolute Maximum Ratings Input (Emitter) Parameter Reverse voltage Forward current Forward surge current Power dissipation Junction temperature Test Conditions t 10 ms Tamb 25C Symbol VR IF IFSM PV Tj Symbol VCEO VECO IC ICM PV Tj Value 6 60 1 100 100 Unit V mA A mW C Output (Detector) Parameter Collector-emitter voltage Emitter-collector voltage Collector current Peak collector current Power dissipation Junction temperature Test Conditions Value 70 7 50 100 150 100 Unit V V mA mA mW C tp/T = 0.5, t 10 ms Tamb 25C Emitter and Detector matched Parameter Ambient temperature range Storage temperature range Soldering temperature Test Conditions Symbol Tamb Tstg Tsd Value -55 to +85 -55 to +100 260 Unit C C C 2 mm from case, t 5 s Electrical Characteristics (Tamb = 25C) Input (Emitter) Parameter Forward voltage Test Conditions IF = 50 mA Test Conditions IC = 1 mA IE = 100 mA VCE = 25 V, IF = 0, E = 0 Test Conditions VCE = 5 V, IF = 20 mA VCE = 5 V, IF = 20 mA IF = 20 mA, IC = 25 mA Symbol VF Symbol VCEO VECO ICEO Symbol IC CTR VCEsat Min. Typ. 1.25 Max. 1.6 Unit V Output (Detector) Parameter Collector emitter voltage Emitter collector voltage Collector dark current Min. 70 7 Typ. Max. Unit V V nA 100 Emitter and Detector matched 1) Parameter Collector current IC/ IF Collector emitter saturation voltage Cut-off frequency 1) Min. 0.25 1.25 Typ. 0.5 2.5 Max. Unit mA V 0.4 IF = 10 mA, VCE = 5 V, fC 110 kHz RL = 100 W Characteristics are measurement at a separation distance of 4 mm (0.55') within a common axis of 0.5 mm (0.02') and parallel within 5 www.vishay.com 2 (7) Document Number 83774 Rev. A3, 20-Jul-99 TCZT8020 Vishay Telefunken Switching Characteristics Parameter Turn-on time Turn-off time Test Conditions VS = 5 V, IC = 1 mA, RL = 100 W (see figure 1) Symbol ton toff Typ. 15.0 10.0 Unit ms ms 0 IF IF +5V IC = 1 mA; adjusted through input amplitude IF 96 11698 RG = 50 W tp = 0.01 T tp = 50 ms 0 tp Channel I 100 W Channel II Oscilloscope RL 1 MW CL 20 pF IC t 50 W 95 10846 y x 100% 90% Figure 1. Test circuit 10% 0 tr td ton tp td tr ton (= td + tr) pulse duration delay time rise time turn-on time ts toff ts tf toff (= ts + tf) storage time fall time turn-off time tf t Figure 2. Switching times Document Number 83774 Rev. A3, 20-Jul-99 www.vishay.com 3 (7) TCZT8020 Vishay Telefunken Typical Characteristics (Tamb = 25_C, unless otherwise specified) 200 P tot - Total Power Dissipation ( mW ) 180 160 140 120 100 80 60 40 20 0 0 96 11947 10000 Photatransistor ICEO- Collector Dark Current, with open Base ( nA ) 1000 VCE=25V IF=0 100 IR-diode 10 1 25 50 75 100 95 11090 0 25 50 75 100 Tamb - Ambient Temperature ( C ) Tamb - Ambient Temperature ( C ) Figure 3. Total Power Dissipation vs. Ambient Temperature 1000.0 Figure 6. Collector Dark Current vs. Ambient Temperature 10 IC - Collector Current ( mA ) VCE=5V d=4mm I F - Forward Current ( mA ) 100.0 1 10.0 0.1 1.0 0.01 0.1 0 96 11862 0.001 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 VF - Forward Voltage ( V ) 95 11111 0.1 1 10 100 IF - Forward Current ( mA ) Figure 4. Forward Current vs. Forward Voltage CTR rel - Relative Current Transfer Ratio 2.0 Figure 7. Collector Current vs. Forward Current 10 IC - Collector Current ( mA ) 1.5 VCE=5V IF=20mA d=4mm d=4mm IF=50mA 1 20mA 10mA 0.1 5mA 2mA 0.01 1.0 0.5 0 -25 95 11097 0 25 50 75 95 11112 0.1 1 10 100 Tamb - Ambient Temperature ( C ) VCE - Collector Emitter Voltage ( V ) Figure 5. Relative Current Transfer Ratio vs. Ambient Temperature www.vishay.com 4 (7) Figure 8. Collector Current vs. Collector Emitter Voltage Document Number 83774 Rev. A3, 20-Jul-99 TCZT8020 Vishay Telefunken 100 CTR - Current Transfer Ratio ( % ) I C - Collector Current ( mA ) VCE=5V d=4mm 10 10 d 1 1 0.1 VCE=5V IF=20mA Tamb=25C 0 2 4 6 8 10 0.1 0.1 95 11114 0.01 1 10 100 95 11115 IF - Forward Current ( mA ) d - Distance ( mm ) Figure 9. Current Transfer Ratio vs. Forward Current t on / t off - Turn on / Turn off Time ( m s ) 20 Non Saturated Operation VS=5V RL=100W d=4mm Figure 11. Collector Current vs. Distance 15 ton 10 toff 5 0 0 95 11104 2 4 6 8 10 IC - Collector Current ( mA ) Figure 10. Turn on / off Time vs. Forward Current Document Number 83774 Rev. A3, 20-Jul-99 www.vishay.com 5 (7) TCZT8020 Vishay Telefunken Dimensions of TCZT8020 in mm 96 12106 www.vishay.com 6 (7) Document Number 83774 Rev. A3, 20-Jul-99 TCZT8020 Vishay Telefunken Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances ( ODSs ). The Montreal Protocol ( 1987 ) and its London Amendments ( 1990 ) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2 . Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency ( EPA ) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C ( transitional substances ) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Telefunken products for any unintended or unauthorized application, the buyer shall indemnify Vishay Telefunken against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 ( 0 ) 7131 67 2831, Fax number: 49 ( 0 ) 7131 67 2423 Document Number 83774 Rev. A3, 20-Jul-99 www.vishay.com 7 (7) |
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